MJE802 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTORS

MJE802
MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (I_B = 0)
VEBO Base-Emitter Voltage (IC = 0)
IC
Collector Current
IB
Base Current
Ptot Total Power Dissipation at T_case ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max Operating Junction Temperature
For PNP types voltage and current values are negative.
January 1997
Value
80
80
5
4
0.1
40
-65 to 150
150
Unit
V
V
V
A
A
W
o_C
o_C
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