MJD50 Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
MJD50
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s HIGH VOLTAGE CAPABILITY
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICALLY SIMILAR TO TIP50
APPLICATIONS
s SWITCH MODE POWER SUPPLIES
s AUDIO AMPLIFIERS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V _EBO
IC
I_CM
IB
I_BM
P_tot
Tstg
T_j
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
Base Current
Base Peak Current (t_p < 5 ms)
Total Dissipation at T_c = 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
January 2000
Value
500
400
5
1
2
0.6
1.2
15
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o_C
o_C
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