MJD340_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

MJD340
®
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MEDIUM VOLTAGE CAPABILITY
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO MJE340 AND
MJE350
APPLICATIONS
s SOLENOID/RELAY DRIVERS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial-Planar technology, resulting in a rugged
high performance cost-effective transistor.
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp = 25 ^oC)
Ptot Total Power Dissipation at T_case ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max Operating Junction Temperature
For PNP types voltage and current values are negative.
September 2003
NPN
PNP
Value
MJD340
MJD350
300
300
3
0.5
0.75
15
-65 to 150
150
Unit
V
V
V
A
A
W
o_C
o_C
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