MJD340 Datasheet, PDF (1/5 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MEDIUM VOLTAGE CAPABILITY
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICAL SIMILAR TO MJE340 AND
MJE350
APPLICATIONS
s SOLENOID/RELAY DRIVERS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial Planar technology, resulting in a rugged
high performance cost-effective transistor.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CBO Collector-Base Voltage (I E = 0)
V_CEO Collector-Emitter Voltage (I_B = 0)
V_EBO Emitt er-Base Voltage (IC = 0)
IC
Collector Current
I_CM Collector Peak Current (tp = 25 ^oC)
P_tot Tot al Power Dissipation at T_case ≤ 25 ^oC
T_stg Storage T emperature
Tj
Max Operating Junction Temperature
For PNP types voltage and current values are negative.
June 1997
NPN
PNP
V alu e
MJD340
MJD350
300
300
3
0.5
0.75
15
-65 to 150
150
Un it
V
V
V
A
A
W
o_C
o_C
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