MJD31B Datasheet, PDF (1/5 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

MJD31B/31C
®
MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_CBO Collect or-Base Voltage (I_E = 0)
V_CEO Collect or-Emitter Voltage (I_B = 0)
VEBO Emitter-Base Voltage (IC = 0)
I_C
Collector Current
I_CM Collector Peak Current
IB
Base Current
P_tot Tot al Dissipation at T_c = 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types the values are intented negative.
May 1999
NPN
PNP
Value
MJD31B
MJD31C
MJD32B
MJD32C
80
100
80
100
5
3
5
1
15
-65 to 150
150
Uni t
V
V
V
A
A
A
W
o_C
o_C
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