MJD122_07 Datasheet, PDF (1/9 Pages) STMicroelectronics – Low voltage power Darlington transistor

MJD122
Low voltage power Darlington transistor
Features
■ Low base drive requirements
■ Integrated antiparallel collector-emitter diode
■ Through hole TO-251 (IPAK) power package in
tube (suffix “-1”)
■ Surface mounting TO-252 (DPAK) power
package in tape & reel (suffix “T4”)
Applications
■ General purpose switching and amplifier
Description
The device is manufactured using Epitaxial-base
technology for high performance.
PNP type is MJD127.
3
2
1
TO-251
IPAK
(suffix “-1”)
3
1
TO-252
DPAK
(suffix “T4”)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
MJD122T4
MJD122-1
MJD122
MJD122
R₁ typ. =10 KW R₂ typ. =150 W
Package
TO-252 (DPAK)
TO-251 (IPAK)
Packaging
Tape & reel
Tube
October 2007
Rev 10
1/9
www.st.com
9