MJD122 Datasheet, PDF (1/6 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

MJD122
®
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICAL SIMILAR TO TIP122 AND
TIP127
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER.
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Sy mbo l
Parameter
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collect or-Emitt er Voltage (IB = 0)
VEBO Emitter-Base Volt age (IC = 0)
IC
Collector Current
ICM Collect or Peak Current
IB
Base Current
Pto t Total Dissipation at T_{c ase} ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
January 1999
NPN
PNP
Valu e
MJD122
MJD127
100
100
5
5
8
100
20
-65 to 150
150
Un it
V
V
V
A
A
mA
W
o_C
o_C
1/6