MJD112_03 Datasheet, PDF (1/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

MJD112
®
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Emitter Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current (tp < 5 ms)
IB
Base Current
Ptot Total Dissipation at Tc = 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP type voltage and current values are negative.
January 2003
R1(typ) = 7KΩ
R2(typ) = 200Ω
Value
100
100
5
2
4
0.05
20
-65 to 150
150
Unit
V
V
V
A
A
A
W
o_C
o_C
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