MJB44H11T4 Datasheet, PDF (1/11 Pages) STMicroelectronics – Low collector-emitter saturation voltage

MJB44H11T4
TAB
3
1
D²PAK
Figure 1. Internal schematic diagram
Low voltage NPN power transistor
Datasheet - production data
Features
• Low collector-emitter saturation voltage
• Fast switching speed
Applications
• Power amplifier
• Switching circuits
Description
This device is an NPN transistor manufactured
using new low voltage planar technology with
double metal process. The result is a transistor
which boasts exceptionally high gain performance
coupled with very low saturation voltage.
Order codes
MJB44H11T4
Table 1. Device summary
Marking
Package
MJB44H11
D²PAK
Packaging
Tape and reel
May 2014
This is information on a product in full production.
DocID022716 Rev 2
1/11
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