MJ4032_03 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

MJ4032
®
MJ4035
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The MJ4035 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ
R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
IB
Base Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
September 2003
PNP
NPN
Value
MJ4032
MJ4035
100
100
5
16
0.5
150
-65 to 200
200
Unit
V
V
V
A
A
W
o_C
o_C
1/4