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M76DW63000A Datasheet, PDF (1/27 Pages) STMicroelectronics – 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product | |||
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M76DW63000A
M76DW62000A
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
â MULTIPLE MEMORY PRODUCT
â 64 Mbit (8Mb x8 or 4Mb x16), Multiple Bank,
Page, Boot Block, Flash Memory
â SRAM: 8Mbit (512K x 16) for
M76DW63000A, or 4Mbit (256K x 16) for
M76DW62000A
â SUPPLY VOLTAGE
â VCCF = VCCS = 2.7V to 3.3V
â VPPF = 12V for Fast Program (optional)
â ACCESS TIME: 70, 90ns
â LOW POWER CONSUMPTION
â ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â Device Code: 227Eh + 2202h + 2201h
FLASH MEMORY
â ASYNCHRONOUS PAGE READ MODE
â Page Width: 4 Words
â Page Access: 25, 30ns
â Random Access: 70, 90ns
â PROGRAMMING TIME
â 10µs per Byte/Word typical
â 4 Words/ 8 Bytes at-a-time Program
â MEMORY BLOCKS
â Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
â Parameter Blocks (at both Top and Bottom)
â DUAL OPERATIONS
â While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
â PROGRAM/ERASE SUSPEND and RESUME
MODES
â Read from any Block during Program
Suspend
â Read and Program another Block during
Erase Suspend
â UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
Figure 1. Package
FBGA
LFBGA73 (ZA)
8 x 11.6mm
â VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
â TEMPORARY BLOCK UNPROTECTION
MODE
â COMMON FLASH INTERFACE
â 64 bit Security Code
â EXTENDED MEMORY BLOCK
â Extra block used as security block or to store
additional information
â 100,000 PROGRAM/ERASE CYCLES per
BLOCK
SRAM
â 8Mbit (512K x 16) or 4Mbit (256K x 16)
â ACCESS TIME: 70ns
â LOW VCCS DATA RETENTION: 1.5V
â POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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