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M74DW66500B Datasheet, PDF (1/19 Pages) STMicroelectronics – 2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product | |||
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M74DW66500B
2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
â MULTIPLE MEMORY PRODUCT
â Two 64Mbit (8M x8 or 4M x16), Multiple Bank,
Page, Boot Block, Flash Memories
â 32Mbit (2M x 16) Pseudo Static RAM
â SUPPLY VOLTAGE
â VCCF = VCCP = 2.7 to 3.3V
â VPPF = 12V for Fast Program (optional)
â ACCESS TIME: 70, 90ns
â LOW POWER CONSUMPTION
â ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â Device Code: 227Eh + 2202h + 2201h
EACH FLASH MEMORY
â ASYNCHRONOUS PAGE READ MODE
â Page Width: 4 Words
â Page Access: 25, 30ns
â Random Access: 70, 90ns
â PROGRAMMING TIME
â 10µs per Byte/Word typical
â 4 Words/ 8 Bytes at-a-time Program
â MEMORY BLOCKS
â Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
â Parameter Blocks (at both Top and Bottom)
â DUAL OPERATIONS
â While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
â PROGRAM/ERASE SUSPEND and RESUME
MODES
â Read from any Block during Program
Suspend
â Read and Program another Block during
Erase Suspend
â UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
Figure 1. Package
FBGA
LFBGA73 (ZA)
8 x 11.6mm
â VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
â TEMPORARY BLOCK UNPROTECTION
MODE
â COMMON FLASH INTERFACE
â 64 bit Security Code
â EXTENDED MEMORY BLOCK
â Extra block used as security block or to store
additional information
â 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
â ACCESS TIME: 70ns
â BYTE CONTROL: UB/LB
â PROGRAMMABLE PARTIAL ARRAY
â 8 WORD PAGE ACCESS CAPABILITY: 18ns
(max)
â LOW STANDBY CURRENT: 100µA
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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