M69KB096AA Datasheet, PDF (1/48 Pages) STMicroelectronics – 64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

M69KB096AA
64 Mbit (4M x16)
1.8V Supply, 80MHz Clock Rate, Burst PSRAM
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 1.7 to 1.95V core supply voltage
– V_CCQ = 1.7 to 3.3V for I/O buffers
■ ASYNCHRONOUS MODES
– Asynchronous Random Read: 70ns and
85ns access time
– Asynchronous Write
– Asynchronous Page Read
Page Size: 16 words
Subsequent read within page: 20ns
■ SYNCHRONOUS BURST READ AND
WRITE MODES
– Burst Write in Continuous Mode
– Burst Read:
Fixed Length (4, 8, or 16 Words) or
Continuous mde
Maximum Clock Frequency: 66MHz,
80MHz
Burst initial latency: 50ns (4 clock cycles)
at 80MHz
Output delay: 9ns at 80MHz
■ BYTE CONTROL BY LB/UB
■ LOW POWER CONSUMPTION
– Asynchronous Random Read Mode:
< 25mA
– Asynchronus Page Read Mode
(subsequent read operations): < 15mA
– Synchronous Burst Read
Initial access: < 35mA
Continuous Burst Read: < 15mA
– Standby Current: 120µA
– Deep Power-Down Current: 10µA (typ)
Figure 1. Package
Wafer
■ LOW POWER FEATURES
– Temperature Compensated Refresh
(TCR)
– Partial Array Refresh (PAR)
– Deep Power-Down (DPD) Mode
■ OPERATING TEMPERATURE
– –30°C to +85°C
THE M69KB096AA IS ONLY AVAILABLE AS PART OF A MULTI-CHIP PACKAGE PRODUCT
January 2006
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