M59DR032EA Datasheet, PDF (1/43 Pages) STMicroelectronics – 32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

M59DR032EA
M59DR032EB
32 Mbit (2Mb x 16, Dual Bank, Page )
1.8V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DD = V_DDQ = 1.65V to 2.2V for Program,
Erase and Read
– V_PP = 12V for fast Program (optional)
s ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 Words
– Page Access: 35ns
– Random Access: 85ns, 100ns and 120ns
s PROGRAMMING TIME
– 10µs by Word typical
– Double Word Program Option
s MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit, 28 Mbit
– Parameter Blocks (Top or Bottom location)
s DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s COMMON FLASH INTERFACE (CFI)
– 64 bit Unique Device Identifier
– 64 bit User Programmable OTP Cells
s ERASE SUSPEND and RESUME MODES
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M59DR032EA: 00A0h
– Bottom Device Code, M59DR032EB: 00A1h
Figure 1. Packages
BGA
TFBGA48 (ZB)
7 x 12mm
BGA
TFBGA48 (ZF)
7 x 7mm
April 2003
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