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M59DR032A Datasheet, PDF (1/38 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory | |||
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M59DR032A
M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory
PRELIMINARY DATA
s SUPPLY VOLTAGE
â VDD = VDDQ = 1.65V to 2.2V: for Program,
Erase and Read
â VPP = 12V: optional Supply Voltage for fast
Program and Erase
s ASYNCHRONOUS PAGE MODE READ
â Page Width: 4 words
â Page Access: 35ns
â Random Access: 100ns
s PROGRAMMING TIME
â 10µs by Word typical
â Double Word Programming Option
s MEMORY BLOCKS
â Dual Bank Memory Array: 4 Mbit - 28 Mbit
â Parameter Blocks (Top or Bottom location)
â Main Blocks
s DUAL BANK OPERATIONS
â Read within one Bank while Program or
Erase within the other
â No delay between Read and Write operations
s BLOCK PROTECTION/UNPROTECTION
â All Blocks protected at Power Up
â Any combination of Blocks can be protected
â WP for Block Locking
s COMMON FLASH INTERFACE (CFI)
s 64 bit SECURITY CODE
s ERASE SUSPEND and RESUME MODES
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
â Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Device Code, M59DR032A: A0h
â Device Code, M59DR032B: A1h
TSOP48 (N)
12 x 20mm
BGA
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
VDD VDDQ VPP
21
A0-A20
16
DQ0-DQ15
W
E
M59DR032A
G
M59DR032B
RP
WP
VSS
AI02544B
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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