M59DR016C Datasheet, PDF (1/37 Pages) STMicroelectronics – 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

M59DR016C
M59DR016D
16 Mbit (1Mb x16, Dual Bank, Page)
1.8V Supply Flash Memory
PRODUCT PREVIEW
s SUPPLY VOLTAGE
– V_DD = V_DDQ = 1.65V to 2.2V for Program,
Erase and Read
– V_PP = 12V for fast Program (optional)
s ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
s PROGRAMMING TIME
– 10µs by Word typical
– Double Word Programming Option
s MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 12 Mbit
– Parameter Blocks (Top or Bottom location)
s DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
s COMMON FLASH INTERFACE (CFI)
s 64 bit SECURITY CODE
s ERASE SUSPEND and RESUME MODES
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59DR016C: 2293h
– Bottom Device Code, M59DR016D: 2294h
BGA
TFBGA48 (ZB)
8 x 6 balls array
Figure 1. Logic Diagram
VDD VDDQ VPP
20
A0-A19
16
DQ0-DQ15
W
E
M59DR016C
G
M59DR016D
RP
WP
VSS
AI04106
March 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
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