M59DR008E Datasheet, PDF (1/37 Pages) STMicroelectronics – 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

M59DR008E
M59DR008F
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory
PRODUCT PREVIEW
s SUPPLY VOLTAGE
– V_DD = V_DDQ = 1.65V to 2.2V: for Program,
Erase and Read
– V_PP = 12V: optional Supply Voltage for fast
Program and Erase
s ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
s PROGRAMMING TIME
– 10µs by Word typical
– Double Word Programming Option
s MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 4 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
– WP for Block Locking
s COMMON FLASH INTERFACE (CFI)
s 64 bit SECURITY CODE
s ERASE SUSPEND and RESUME MODES
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR008E: A2h
– Device Code, M59DR008F: A3h
TSOP48 (N)
12 x 20mm
BGA
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
VDD VDDQ VPP
19
A0-A18
16
DQ0-DQ15
W
E
M59DR008E
G
M59DR008F
RP
WP
VSS
AI03212
October 1999
This is preliminary information on a new product now in development. Details are subject to change without notice.
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