M59BW102 Datasheet, PDF (1/24 Pages) STMicroelectronics – 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
s SEQUENTIAL CYCLE TIME: 25ns
s RANDOM ACCESS TIME
s PROGRAMMING TIME: 10µs typical
s INTERLEAVED ACCESS TIME: 16ns
s CONTINUOUS MEMORY INTERLEAVING
– Unlimited Linear Access Data Output
s PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Word-by-Word
– Status Register bits
s LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
s 100,000 PROGRAM/ERASE CYCLES
s 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: C1h
DESCRIPTION
The M59BW102 is a non-volatile memory that may
be erased electrically at the chip level and pro-
grammed in-system on a Word-by-Word basis us-
ing only a single 3V V_CC supply. For Program and
Erase operations the necessary high voltages are
generated internally. The device can also be pro-
grammed in standard programmers.
The device can be programmed and erased over
100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature, Programming and
Chip Erase are written to the device in cycles of
commands to a Command Interface using stan-
dard microprocessor write timings. The
M59BW102 features an interleaved access mo-
dality which allows extremely fast access time.
The device is offered in TSOP40 (10 x 14mm)
package.
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
VCC
16
A0-A15
16
DQ0-DQ15
W
E
M59BW102
G
ALE
VSS
AI02763B
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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