M58WR064ET Datasheet, PDF (1/82 Pages) STMicroelectronics – 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

M58WR064ET
M58WR064EB
64 Mbit (4Mb x 16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DD = 1.65V to 2.2V for Program, Erase and
Read
– V_DDQ = 1.65V to 3.3V for I/O Buffers
– V_PP = 12V for fast Program (optional)
s SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100 ns
s PROGRAMMING TIME
– 8µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s COMMON FLASH INTERFACE (CFI)
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR064ET: 8810h
– Bottom Device Code, M58WR064EB: 8811h
February 2003
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