M58WR032ET Datasheet, PDF (1/81 Pages) STMicroelectronics – 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

M58WR032ET
M58WR032EB
32 Mbit (2Mb x 16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_DD = 1.65V to 2.2V for Program, Erase
and Read
– V_DDQ = 1.65V to 3.3V for I/O Buffers
– V_PP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100ns
■ PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
■ DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■ BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently
lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR032ET: 8814h
– Bottom Device Code, M58WR032EB:
8815h
April 2004
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