M58WR016KU Datasheet, PDF (1/10 Pages) STMicroelectronics – 16- or 32-Mbit (×16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories

M58WR016KU M58WR016KL
M58WR032KU M58WR032KL
16- or 32-Mbit (×16, Mux I/O, Multiple Bank, Burst)
1.8 V supply Flash memories
Data Brief
Features
■ Supply voltage
– V_DD = 1.7 V to 2 V for Program, Erase and
Read
– V_DDQ = 1.7 V to 2 V for I/O buffers
– V_PP = 9 V for fast Program
■ Multiplexed address/data
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 86 MHz
– Random access: 60 ns, 70 ns
■ Synchronous Burst Read Suspend
■ Programming time
– 10 µs by word typical for Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (top or bottom location)
■ Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■ Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
■ Common Flash Interface (CFI)
■ 100 000 program/erase cycles per block
FBGA
VFBGA44 (ZA)
7.5 × 5 mm
■ Electronic signature
– Manufacturer Code: 20h
– Top device code,
M58WR016KU: 8823h
M58WR032KU: 8828h
– Bottom device code,
M58WR016KL: 8824h
M58WR032KL: 8829h
■ ECOPACK® packages available
January 2007
Rev 1
For further information contact your local STMicroelectronics sales office.
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