M58LW128A Datasheet, PDF (1/65 Pages) STMicroelectronics – 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

M58LW128A
M58LW128B
128 Mbit (8Mb x16 or 4Mb x32, Uniform Block, Burst)
3V Supply Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
s WIDE DATA BUS for HIGH BANDWIDTH
– M58LW128A: x16
– M58LW128B: x16/x32
s SUPPLY VOLTAGE
– V_DD = 2.7 to 3.6V core supply voltage for Pro-
gram, Erase and Read operations
– V_DDQ = 1.8 to V_DD for I/O Buffers
s SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Pipelined Synchronous Burst Read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled
Read
– Page Read
s ACCESS TIME
– Synchronous Burst Read up to 66MHz
– Asynchronous Page Mode Read 150/25ns
– Random Read 150ns
s PROGRAMMING TIME
– 16 Word or 8 Double-Word Write Buffer
– 12µs Word effective programming time
s 128 UNIFORM 64 KWord MEMORY BLOCKS
s BLOCK PROTECTION/ UNPROTECTION
s PROGRAM and ERASE SUSPEND
s OTP SECURITY AREA
s COMMON FLASH INTERFACE
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW128A: 8818h
– Device Code M58LW128B: 8819h
Figure 1. Packages
TSOP56 (N)
14 x 20mm
TBGA
TBGA64 (ZA)
10 x 13mm
TBGA
TBGA80 (ZA)
10 x 13mm
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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