M58LV064A Datasheet, PDF (1/65 Pages) STMicroelectronics – 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories

M58LV064A
M58LV064B
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst)
3V Supply Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
s WIDE DATA BUS for HIGH BANDWIDTH
– M58LV064A: x16
– M58LV064B: x16/x32
s SUPPLY VOLTAGE
– V_DD = 3.0 to 3.6V M58LV064 core supply
– V_DDQ = 1.8 to V_DD for I/O Buffers
s SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Pipelined Synchronous Burst Read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled
Read
– Page Read
s ACCESS TIME
– Synchronous Burst Read up to 66MHz
– Asynchronous Page Mode Read 150/25ns
– Random Read 150ns
s PROGRAMMING TIME
– 16 Word or 8 Double-Word Write Buffer
– 12µs Word effective programming time
s 64 UNIFORM 64 KWord MEMORY BLOCKS
s BLOCK PROTECTION/ UNPROTECTION
s PROGRAM and ERASE SUSPEND
s OTP SECURITY AREA
s COMMON FLASH INTERFACE
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LV064A: 0015h
– Device Code M58LV064B: 0014h
Figure 1. Packages
TSOP56 (N)
14 x 20mm
TBGA
TBGA64 (ZA)
10 x 13mm
TBGA
TBGA80 (ZA)
10 x13mm
December 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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