M58LT128GS Datasheet, PDF (1/98 Pages) STMicroelectronics – 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories

M58LT128GST
M58LT128GSB
128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Secure Flash Memories
PRELIMINARY DATA
Features Summary
■ SUPPLY VOLTAGE
– V_DD = 1.7 to 2.0V for program, erase and
read
– V_DDQ = 2.7 to 3.6V for I/O Buffers
– V_PP = 9V for fast program
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Random Access: 110ns
– Asynchronous Page Read: 25ns.
– Synchronous Burst Read: 52MHz
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
■ MEMORY ORGANIZATION
– Multiple Bank Memory Array:
8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ HARDWARE PROTECTION
– All Blocks Write Protected when V_PP≤V_PPLK
■ SECURITY
– Software Security Features
– 64-bit Unique Device Identifier
– 2112 bits of User-Programmable OTP
memory
■ COMMON FLASH INTERFACE (CFI)
BGA
TBGA64 (ZA)
10 x 13mm
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code:
M58LT128GST: 88C6h
M58LT128GSB: 88C7h
■ ECOPACK^® PACKAGE AVAILABLE
September 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/98
www.st.com
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