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M58CR032C Datasheet, PDF (1/63 Pages) STMicroelectronics – 32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory | |||
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M58CR032C
M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
â VDD = 1.65V to 2V for Program, Erase and
Read
â VDDQ = 1.65V to 3.3V for I/O Buffers
â VPP = 12V for fast Program (optional)
s SYNCHRONOUS / ASYNCHRONOUS READ
â Burst mode Read: 54MHz
â Page mode Read (4 Words Page)
â Random Access: 85, 100, 120 ns
s PROGRAMMING TIME
â 10µs by Word typical
â Double/Quadruple Word programming option
s MEMORY BLOCKS
â Dual Bank Memory Array: 8/24 Mbit
â Parameter Blocks (Top or Bottom location)
s DUAL OPERATIONS
â Read in one Bank while Program or Erase in
other
â No delay between Read and Write operations
s BLOCK LOCKING
â All blocks locked at Power up
â Any combination of blocks can be locked
â WP for Block Lock-Down
s SECURITY
â 64 bit user programmable OTP cells
â 64 bit unique device identifier
â One parameter block permanently lockable
s COMMON FLASH INTERFACE (CFI)
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Packages
FBGA
TFBGA56 (ZB)
6.5 x 10 mm
s ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Top Device Code, M58CR032C: 88C8h
â Bottom Device Code, M58CR032D: 88C9h
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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