M58BW032BT Datasheet, PDF (1/60 Pages) STMicroelectronics – 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory

M58BW032BT, M58BW032BB
M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst)
3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_DD = 3.0V to 3.6V for Program, Erase
and Read
– V_DDQ = V_DDQIN = 1.6V to 3.6V for I/O
Buffers
■ HIGH PERFORMANCE
– Access Time: 45, 55 and 60ns
– 75MHz Effective Zero Wait-State Burst
Read
– Synchronous Burst Reads
– Asynchronous Page Reads
■ MEMORY ORGANIZATION
– Eight 64 Kbit small parameter Blocks
– Four 128Kbit large parameter Blocks (of
which one is OTP)
– Sixty-two 512Kbit main Blocks
■ HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
– V_PEN signal for Program/Erase Enable
■ SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64-bit User Programmable
Password (M58BW032B version only)
■ SECURITY
– 64-bit Unique Device Identifier (UID)
■ FAST PROGRAMMING
– Write to Buffer and Program capability
■ OPTIMIZED FOR FDI DRIVERS
– Common Flash Interface (CFI)
– Fast Program/Erase Suspend feature in
each block
■ LOW POWER CONSUMPTION
– 100µA Typical Standby
Figure 1. Packages
PQFP80 (T)
BGA
LBGA80 (ZA)
10 x 8 ball array
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW032xT: 8838h
– Bottom Device Code M58BW032xB:
8837h
■ OPERATING TEMPERATURE RANGE
– Automotive (Grade 3): –40 to 125°C
– Industrial (Grade 6): –40 to 90°C
November 2004
1/60
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.