M58BW016BT Datasheet, PDF (1/63 Pages) STMicroelectronics – 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories

M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
PE4FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DD = 2.7V to 3.6V for Program, Erase and
Read
– V_DDQ = V_DDQIN = 2.4V to 3.6V for I/O Buffers
– V_PP = 12V for fast Program (optional)
s HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
s HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
s SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
s OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6µs
– Common Flash Interface
s MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
s LOW POWER CONSUMPTION
– 5µA Typical Deep Power Down
– 60µA Typical Standby
– Automatic Standby after Asynchronous Read
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
Figure 1. Packages
PQFP80 (T)
BGA
LBGA80 (ZA)
10 x 8 ball array
May 2003
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