M54HC03_04 Datasheet, PDF (1/7 Pages) STMicroelectronics – RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE

M54HC03
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE
s HIGH SPEED:
t_PD = 8ns (TYP.) at V_CC = 6V
s LOW POWER DISSIPATION:
I_CC = 1µA(MAX.) at T_A=25°C
s HIGH NOISE IMMUNITY:
V_NIH = V_NIL = 28% V_CC (MIN.)
s BALANCED PROPAGATION DELAYS:
t_PLH ≅ t_PHL
s WIDE OPERATING VOLTAGE RANGE:
V_CC (OPR) = 2V to 6V
s PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 03
s SPACE GRADE-1: ESA SCC QUALIFIED
s 50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
s NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
s DEVICE FULLY COMPLIANT WITH
SCC-9201-114
DESCRIPTION
The M54HC03 is an high speed CMOS QUAD
2-INPUT OPEN DRAIN NAND GATE fabricated
with silicon gate C²MOS technology.
DILC-14
FPC-14
ORDER CODES
PACKAGE
FM
DILC
FPC
M54HC03D
M54HC03K
EM
M54HC03D1
M54HC03K1
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output. This device can, with
an external pull-up resistor, be used in wired AND
configuration. This device can be also used as a
led driver and in any other application requiring a
current sink.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION
March 2004
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