M39P0R9070E0 Datasheet, PDF (1/26 Pages) STMicroelectronics – 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

M39P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory
128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
PRELIMINARY DATA
Features summary
■ Multi-chip package
– 1die of 512 Mbit (32Mb x 16, Multiple Bank,
Multi-Level, Burst) Flash memory
– 1 die of 128 Mbit (4 Banks of 2Mb x16) Low
Power Synchronous Dynamic RAM
■ Supply voltage
– V_DDF = V_CCP = V_DDQ = 1.7 to 1.95V
– V_PPF = 9V for fast program (12V tolerant)
■ Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
■ Package
– ECOPACK® (RoHS compliant)
Flash memory
■ Synchronous / asynchronous read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 93ns
■ Programming time
– 4µs typical Word program time using Buffer
Enhanced Factory Program command
■ Memory organization
– Multiple Bank Memory Array: 64 Mbit
Banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Security
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
FBGA
TFBGA105 (ZAD)
9 x 11mm
■ 100,000 program/erase cycles per block
■ Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP_F for Block Lock-Down
– Absolute Write Protection with V_PPF = V_SS
■ Common Flash Interface (CFI)
LPSDRAM
■ 128Mbit synchronous dynamic RAM
– Organized as 4 Banks of 2 MWords, each
16 bits wide
■ Synchronous burst read and write
– Fixed Burst Lengths: 1, 2, 4, 8 words or Full
Page
– Burst Types: Sequential and Interleaved.
– Maximum Clock Frequency: 104MHz
– CAS Latency 2, 3
■ Automatic precharge
■ Low power features:
– PASR (Partial Array Self Refresh),
– Automatic TCSR (Temperature
Compensated Self Refresh)
– Driver Strength (DS)
– Deep Power-Down Mode
■ Auto Refresh and Self Refresh
November 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev. 1
1/26
www.st.com
1