M36W416TG Datasheet, PDF (1/62 Pages) STMicroelectronics – 16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product

M36W416TG
M36W416BG
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
s MULTIPLE MEMORY PRODUCT
– 16 Mbit (1Mb x 16) Boot Block Flash Memory
– 4 Mbit (256Kb x 16) SRAM
s SUPPLY VOLTAGE
– V_DDF = V_DDS = 2.7V to 3.3V
– V_DDQF = V_DDS = 2.7V to 3.3V
– V_PPF = 12V for Fast Program (optional)
s ACCESS TIME: 70ns, 85ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W416TG: 88CEh
– Bottom Device Code, M36W416BG: 88CFh
FLASH MEMORY
s MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP_F for Block Lock-Down
s AUTOMATIC STAND-BY MODE
s PROGRAM and ERASE SUSPEND
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s COMMON FLASH INTERFACE
– 64 bit Security Code
s SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
SRAM
s 4 Mbit (256Kb x 16)
s ACCESS TIME: 70ns
s LOW V_DDS DATA RETENTION: 1.5V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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