M36W108AT Datasheet, PDF (1/36 Pages) STMicroelectronics – 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

M36W108AT
M36W108AB
8 Mbit (1Mb x8, Boot Block) Flash Memory and
1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
PRELIMINARY DATA
s SUPPLY VOLTAGE
– V_CCF = V_CCS = 2.7V to 3.6V: for Program,
Erase and Read
s ACCESS TIME: 100ns
s LOW POWER CONSUMPTION
– Read: 40mA max. (SRAM chip)
– Stand-by: 30µA max. (SRAM chip)
– Read: 10mA max. (Flash chip)
– Stand-by: 100µA max. (Flash chip)
FLASH MEMORY
s 8 Mbit (1Mb x 8) BOOT BLOCK ERASE
s PROGRAMMING TIME: 10µs typical
s PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
s SECURITY PROTECTION MEMORY AREA
s INSTRUCTION ADDRESS CODING: 3 digits
s MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main Blocks
s BLOCK, MULTI-BLOCK and CHIP ERASE
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M36W108AT: D2h
– Device Code, M36W108AB: DCh
SRAM
s 1 Mbit (128Kb x 8)
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
s LOW V_CC DATA RETENTION: 2V
BGA
LBGA48 (ZM)
6 x 8 solder balls
LGA
LGA48 (ZN)
6 x 8 solder lands
Figure 1. Logic Diagram
VCCF VCCS
20
A0-A19
8
DQ0-DQ7
W
EF
RB
M36W108AT
G
M36W108AB
RP
E1S
E2S
VSS
AI02620
March 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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