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M36P0R9070E0_06 Datasheet, PDF (1/23 Pages) STMicroelectronics – 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
■ Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash Memory
– 1 die of 128Mbit (8Mb x16) PSRAM
■ Supply voltage
– VDDF = VCCP = VDDQ = 1.7 to 1.95V
– VPPF = 9V for fast program
■ Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
■ ECOPACK® package available
Flash memory
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
■ Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
■ 100,000 program/erase cycles per block
■ Common Flash Interface (CFI)
FBGA
TFBGA107 (ZAC)
■ Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WPF for Block Lock-Down
– Absolute Write Protection with VPPF = VSS
PSRAM
■ Access time: 70ns
■ User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
■ Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
■ Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 80MHz
■ Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
■ Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
July 2006
Rev 2
1/23
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