M36P0R9070E0 Datasheet, PDF (1/26 Pages) STMicroelectronics – 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory
128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
PRELIMINARY DATA
Features summary
■ Multi-chip package
– 1die of 512 Mbit (32Mb x 16, Multiple Bank,
Multi-Level, Burst) Flash Memory
– 1 die of 128Mbit (8Mb x16) PSRAM
■ Supply voltage
– V_DDF = V_CCP = V_DDQ = 1.7 to 1.95V
– V_PPF = 9V for fast program (12V tolerant)
■ Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
■ Package
– ECOPACK®
Flash memory
■ Synchronous / asynchronous read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 93ns
■ Programming time
– 4µs typical Word program time using Buffer
Enhanced Factory Program command
■ Memory organization
– Multiple Bank Memory Array: 64 Mbit
Banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
FBGA
TFBGA107 (ZAC)
■ Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
■ 100,000 program/erase cycles per block
■ Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP_F for Block Lock-Down
– Absolute Write Protection with V_PPF = V_SS
■ Common Flash Interface (CFI)
PSRAM
■ Access time: 70ns
■ Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent read within page: 20ns
■ Low power features
– Partial Array Self Refresh (PASR)
– Deep Power-Down mode (DPD)
■ Synchronous Burst Read/Write
November 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev. 1
1/26
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