M36P0R9060E0 Datasheet, PDF (1/23 Pages) STMicroelectronics – 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9060E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
■ Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash memory
– 1 die of 64 Mbit (4Mb x16) PSRAM
■ Supply voltage
– V_DDF = V_CCP = V_DDQ = 1.7 to 1.95V
– V_PPF = 9V for fast program
■ Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
■ ECOPACK® package
Flash memory
■ Synchronous / asynchronous read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
■ Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple Bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
■ Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ 100,000 Program/erase cycles per block
■ Common Flash Interface (CFI)
FBGA
TFBGA107 (ZAC)
■ Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP_F for Block Lock-Down
– Absolute Write Protection with V_PPF = V_SS
PSRAM
■ User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
■ Asynchronous Random Read
– Access time: 70ns
■ Asynchronous Page Read
– Page size: 4, 8 or 16 Words
– Subsequent Read within Page: 20ns
■ Burst Read
– Fixed length (4, 8, 16 or 32 Words) or
Continuous
■ Low power consumption
– Active current: < 25mA
– Standby current: 140µA
– Deep Power-Down current: < 10µA
■ Low-power features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated Self-
Refresh
July 2006
Rev. 2
1/23
www.st.com
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