M36DR432C Datasheet, PDF (1/46 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

M36DR432C
M36DR432D
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 4 Mbit (256K x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DDF = V_DDS =1.9V to 2.1V
– V_PPF = 12V for Fast Program (optional)
s ACCESS TIME: 85,100ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR432C: 00A4h
– Bottom Device Code, M36DR432D: 00A5h
FLASH MEMORY
s 32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
s DUAL BANK OPERATION
– Read within one Bank while Program or
Erase within the other
– No Delay between Read and Write
Operations
s BLOCK PROTECTION ON ALL BLOCKS
– WPF for Block Locking
s COMMON FLASH INTERFACE
– 64 bit Security Code
SRAM
s 4 Mbit (256K x 16 bit)
s LOW V_DDS DATA RETENTION: 1V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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