M30LW128D Datasheet, PDF (1/57 Pages) STMicroelectronics – 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product

M30LW128D
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories)
3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
s TWO M58LW064D 64Mbit FLASH MEMORIES
STACKED IN A SINGLE PACKAGE
s WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH
s SUPPLY VOLTAGE
– V_DD = 2.7 to 3.6V for Program, Erase and
Read operations
– V_DDQ = 1.8 to V_DD for I/O buffers
s ACCESS TIME
– Random Read 110ns
– Page Mode Read 110/25ns
s PROGRAMMING TIME
– 16 Word Write Buffer
– 16µs Word effective programming time
s 128 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
s BLOCK PROTECTION/ UNPROTECTION
s PROGRAM and ERASE SUSPEND
s 128 bit PROTECTION REGISTER
s COMMON FLASH INTERFACE
s 100, 000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code M30LW128D: 8817h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA
TBGA64 (ZA)
10 x 13mm
FBGA
LFBGA88 (ZE)
8 x 10mm
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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