M29W800DT70N6 Datasheet, PDF (1/41 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

M29W800DT
M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase
and Read
■ ACCESS TIME: 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program
algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W800DT: 22D7h
– Bottom Device Code M29W800DB:
225Bh
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8mm
April 2004
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