M29W800AT Datasheet, PDF (1/33 Pages) STMicroelectronics – 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W800AT
M29W800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s 2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 80ns
s PROGRAMMING TIME: 10µs typical
s PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
s SECURITY PROTECTION MEMORY AREA
s INSTRUCTION ADDRESS CODING: 3 digits
s MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
s BLOCK, MULTI-BLOCK and CHIP ERASE
s MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M29W800AT: D7h
– Bottom Device Code, M29W800AB: 5Bh
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
FBGA
LFBGA48 (ZA)
8 x 6 solder balls
Figure 1. Logic Diagram
VCC
19
A0-A18
15
DQ0-DQ14
W
DQ15A–1
M29W800AT
E
M29W800AB
BYTE
G
RB
RP
VSS
AI02599
March 2000
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