M29W640FT Datasheet, PDF (1/72 Pages) STMicroelectronics – 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Features summary
Supply Voltage
– V_CC = 2.7V to 3.6V for Program, Erase,
Read
– V_PP =12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
Programming Time
– 10 µs per Byte/Word typical
– 4 Words/8 Bytes Program
135 memory blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
Program/Erase Controller
– Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
V_PP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64-bit Security Code
Extended Memory Block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6x8mm
Electronic Signature
– Manufacturer Code: 0020h
Table 1. Device Codes
Root Part Number
M29W640FT
M29W640FB
Device Code
22EDh
22FDh
ECOPACK^® packages
December 2005
Rev3
1/72
www.st.com
1