M29W640DT Datasheet, PDF (1/49 Pages) STMicroelectronics – 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

M29W640DT
M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase,
Read
– V_PP =12 V for Fast Program (optional)
■ ACCESS TIME: 90 ns
■ PROGRAMMING TIME
– 10 µs per Byte/Word typical
– Double Word Programming Option
■ 135 MEMORY BLOCKS
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program
algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ V_PP/WP Pin for FAST PROGRAM and WRITE
PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64-bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W640DT: 22DEh
– Bottom Device Code M29W640DB:
22DFh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
63 ball array
December 2004
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