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M29W400DT_07 Datasheet, PDF (1/48 Pages) STMicroelectronics – 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory | |||
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M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
â Supply voltage
â VCC = 2.7 V to 3.6 V for Program, Erase
and Read
â Access time: 45, 55, 70 ns
â Programming time
â 10 µs per byte/word typical
â 11 memory blocks
â 1 boot block (top or bottom location)
â 2 parameter and 8 main blocks
â Program/Erase controller
â Embedded byte/word program algorithms
â Erase Suspend and Resume modes
â Read and Program another block during
Erase Suspend
â Unlock bypass program command
â Faster production/batch programming
â Temporary block unprotection mode
â Low power consumption
â Standby and Automatic Standby
â 100,000 Program/Erase cycles per block
â Electronic signature
â Manufacturer code: 0020h
â Top device code M29W400DT: 00EEh
â Bottom device code M29W400DB: 00EFh
â ECOPACK® packages
SO44 (M)(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)(1)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
August 2007
Rev 5
1/48
www.st.com
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