M29W400DT Datasheet, PDF (1/38 Pages) STMicroelectronics – 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory

M29W400DT
M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase
and Read
■ ACCESS TIME: 45, 55, 70ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program
algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400DT: 00EEh
– Bottom Device Code M29W400D: 00EFh
■ PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9mm
FBGA
TFBGA48 (ZE)
6 x 8mm
June 2004
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