M29W200BT Datasheet, PDF (1/22 Pages) STMicroelectronics – 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

M29W200BT
M29W200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W200BT: 0051h
– Bottom Device Code: M29W200BB 0057h
■ ECOPACK^® PACKAGES AVAILABLE
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
Figure 1. Logic Diagram
VCC
17
A0-A16
15
DQ0-DQ14
W
DQ15A–1
M29W200BT
E
M29W200BB
BYTE
G
RB
RP
VSS
AI02948
September 2005
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