M29W160DT Datasheet, PDF (1/29 Pages) STMicroelectronics – 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory

M29W160DT
M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 70ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
s 35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Program and Erase algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s SECURITY MEMORY BLOCK
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160DT: 22C4h
– Bottom Device Code M29W160DB: 2249h
Figure 1. Packages
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
FBGA
LFBGA48 (ZA)
8 x 6 solder balls
January 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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