M29W160BT Datasheet, PDF (1/25 Pages) STMicroelectronics – 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W160BT
M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Low Voltage Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 70ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
s 35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 32 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s SECURITY MEMORY BLOCK
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160BT: 22C4h
– Bottom Device Code M29W160BB: 2249h
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
FBGA
LFBGA48 (ZA)
8 x 6 solder balls
Figure 1. Logic Diagram
VCC
20
A0-A19
15
DQ0-DQ14
W
DQ15A–1
M29W160BT
E
M29W160BB
BYTE
G
RB
RP
VSS
AI00981
Note: RB not available on SO44 package.
February 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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