M29W040B Datasheet, PDF (1/20 Pages) STMicroelectronics – 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
– 10µs per Byte typical
■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
■ ECOPACK^® PACKAGES AVAILABLE
PLCC32 (K)
TSOP32 (N)
8 x 20mm
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
M29W040B
E
G
VSS
AI02953
September 2005
1/20