M29W040 Datasheet, PDF (1/31 Pages) STMicroelectronics – 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
M29W040 is replaced by the M29W040B
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
BYTE PROGRAMMING TIME: 12µs typical
ERASE TIME
– Block: 1.5 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
P/E.C. Status
MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 20µA typical
– Automatic Stand-by mode
POWER DOWN SOFTWARE COMMAND
– Power-down mode: 1µA typical
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7 Data Input / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V_CC
Supply Voltage
V_SS
Ground
NOT FOR NEW DESIGN
PLCC32 (K)
TSOP32 (N)
8 x 20mm
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
M29W040
E
G
VSS
AI02074
November 1999
This is information on a product still in productionbut not recommended for new designs.
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