M29W022BT Datasheet, PDF (1/20 Pages) STMicroelectronics – 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory

M29W022BT
M29W022BB
2 Mbit (256Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
– 10µs by Byte typical
s 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29W022BT: C4h
– Bottom Device Code M29W022BB: C3h
TSOP32 (NZ)
8 x 14mm
PLCC32 (K)
Figure 1. Logic Diagram
VCC
18
A0-A17
8
DQ0-DQ7
W
M29W022BT
M29W022BB
E
G
VSS
AI02971
March 2000
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