M29W008ET Datasheet, PDF (1/43 Pages) STMicroelectronics – 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

M29W008ET
M29W008EB
8 Mbit (1Mb x 8, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ ACCESS TIMES: 70ns, 90ns
■ PROGRAMMING TIME: 10µs per Byte typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Embedded Byte Program Algorithm
– Status Register bits and Ready/Busy
Output
■ 19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom location)
– 2 Parameter and 16 Main Blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTIPLE BLOCK PROTECTION/
TEMPORARY UNPROTECTION MODE
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby modes
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– M29W008ET Device Code: D2h
– M29W008EB Device Code: DCh
■ ECOPACK^® TSOP40 PACKAGE
Figure 1. Package
TSOP40 (N)
10 x 20mm
June 2005
Rev 0.1
1/43
www.st.com
1