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M29W004BT Datasheet, PDF (1/20 Pages) STMicroelectronics – 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory | |||
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M29W004BT
M29W004BB
4 Mbit (512Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
â 10µs by Byte typical
s 11 MEMORY BLOCKS
â 1 Boot Block (Top or Bottom Location)
â 2 Parameter and 8 Main Blocks
s PROGRAM/ERASE CONTROLLER
â Embedded Byte Program algorithm
â Embedded Multi-Block/Chip Erase algorithm
â Status Register Polling and Toggle Bits
â Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
â Read and Program another Block during
Erase Suspend
s TEMPORARY BLOCK UNPROTECTION
MODE
s UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
s LOW POWER CONSUMPTION
â Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
â Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Top Device Code M29W004BT: EAh
â Bottom Device Code M29W004BB: EBh
TSOP40 (N)
10 x 20mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W
M29W004BT
E
M29W004BB
RB
G
RP
VSS
AI02954
March 2000
1/20
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